A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si: H  

A new way of fabricating luminescent silicon crystallites by excimer laser annealing of a-Si: H

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作  者:吴巍 黄信凡 李志锋 陈坤基 陈晓原 刘治国 

机构地区:[1]Department of Physics and National Laboratory of Solid State Microstructures, Nanjing Univeristy, Nanjing 210008, China

出  处:《Chinese Science Bulletin》1996年第13期1079-1083,共5页

基  金:Project supported by the National Natural Science Foundation of China;the Natural Science Foundation of Jiangsu Province.

摘  要:Si is an important material for manufacturing chips of microelectronic integrated circuits and transistors. Special Si devices can be used as the base materials for optical transmitters and detectors. However, as crystalline Si is an indirect band gap material and

关 键 词:EXCIMER laser CRYSTALLIZATION NANO-SIZE Si. 

分 类 号:TN249[电子电信—物理电子学]

 

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