Dependence of film resistance on fractal formation of Au/a-Ge bilaver films  

作　　者：张庶元 陈志文 田明亮 谭舜 李伯泉 朱警生 张裕恒 

机构地区：[1]Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China

出　　处：《Chinese Science Bulletin》1996年第10期818-821,共4页

基　　金：Project supported by the National Natural Science Foundation of China.

摘　　要：In recent years there has been great progress in the study of the fractal crystallizationin the metal/semiconductor bilayer film system. The nature of the fractal crystallizationin these bilayer films is being revealed. However, many of the studies focused on the growthmechanism of the fractal, while little attention has been given to the change in physicalproperties of the films during the fractal structure formation. After fractal crystallizationof a metal/semiconducor film there should exist evident change in its microstructure,

关 键 词：FRACTAL CRYSTALLIZATION FRACTAL DIMENSION resistance random TUNNELING JUNCTION network. 

分 类 号：O484.4[理学—固体物理]