BeⅠ等电子序列的高激发态结构（奇宇称，J＝0）  

Highly-excited State Structure of BeⅠIsoeletronic(odd parity,J=0)

作　　者：赵翠兰[1] 王治文[1] 

机构地区：[1]吉林大学原子分子所

出　　处：《内蒙古民族大学学报（自然科学版）》1996年第1期24-27,共4页Journal of Inner Mongolia Minzu University：Natural Sciences

摘　　要：本文应用本征通道量子亏损理论（ＥＱＤＴ），系统地研究了ＢｅⅠ等电子序列（ＢｅⅠ－ＭｇＫ）的高激发态结构。得到了描述高激发态结构的ＥＱＤＴ参量（μα，Ｕｉ）以及它们随核电荷数增大的变化规律。以这些参量作为输入，获得了类Ｂｅ体系２ｓｎｐ．２ｐｎｓ，２ｐｎｄ组态的全部Ｒｙｄｂｅｒｇ能级及混合系数。结果表明：理论值与实验值在高激发能区趋于一致，相对误差在１０－５左右。Highly-excited state structures with J = 0 and odd parity of the Beryllium isoelectronic sequence(BeⅠ- MgⅣ)are reseached by using the eigen changal quantum defect theory(EQDT).EQDT parameters μa and Uia are obtained,they are function of effective nuelear charge.Our results indicate that the differences between eigenquantum defects of different channals,which characteriqe the channal interaetion gradually diminish along this sequence.A lot of basic atomic data g.all dissrete energy levels and their channel mixing coefficiens are evaluated with EQDT parameters as input.As a numerical example,the Lu - Fano Plots of BeⅠand C Ⅲ are given.

关 键 词：BeⅠ等电子序列 高激发态 本征通道量子亏损理论 

分 类 号：O571.24[理学—粒子物理与原子核物理]