介质谐振器稳频的微带体效应振荡器  

Dielectric Resonator Stabilized Microstrip Gunn-Effect Oscillators

作　　者：李衍忠[1] 徐泽雨 

机构地区：[1]电子科技大学电子工程系

出　　处：《电子科技大学学报》1995年第S2期260-263,共4页Journal of University of Electronic Science and Technology of China

基　　金：航天部预研基金

摘　　要：简介了介质谐振器稳频的体效应振荡器的设计方法，分析了高Ｑ值介质谐振器在电路中的稳频作用。研制的８．５ＧＨｚ微带体效应振荡器输出功率大于３５ｍｗ，在２５℃～５０℃范围内频率稳定度为５ｐｐｍ／℃，且对介质谐振器自身频率温度系数的补偿作用进行了实验。The design method of a dielectric resonator oscillator (DRO)and the stabilized frequency function of a high Q dielectric resonator(DR)are introduced in this paper.Then a microstrip Gunn-effectoscillator is designed , analyzed and constructed with frequency being stabilized using a high Q ceramic DR. The exporimental results and curves are given. At the end of this poper,the experimental results areanalyzed,and some improved measures are discussed. As a local oscillator,the DRO is applied to X Bandfront-end receivers.It is a satisfactory local oscillator with high performance.

关 键 词：介质谐振器 体效应二极管 稳频振荡器 频率 温度系数 微带 

分 类 号：TN752[电子电信—电路与系统]