YBCO Films Grown on Sapphire with YSZ Buffer Layer  

作　　者：石东奇 杨秉川 王小平 彭正顺 常世安 

出　　处：《Rare Metals》1994年第4期269-272,共4页稀有金属（英文版）

摘　　要：The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-osition conditions on the structure of YSZ films was studied X-ray diffraction rock curve and electron channel-ling pattern (ECP) showed that the YSZ films has highly oriented nature. YBCO (Y BaCuO) films were depos-ited on the YSZ / (1120) Al_2O_3 and (1102) Al_2O_3, substrate by in situ de inverted cyhdrical target magnetronsputtering method. T_c≥88K and J_c=1O × 10￣6A / cm￣2 at 77 K were achievedThe (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-osition conditions on the structure of YSZ films was studied X-ray diffraction rock curve and electron channel-ling pattern (ECP) showed that the YSZ films has highly oriented nature. YBCO (Y BaCuO) films were depos-ited on the YSZ / (1120) Al_2O_3 and (1102) Al_2O_3, substrate by in situ de inverted cyhdrical target magnetronsputtering method. T_c≥88K and J_c=1O × 10￣6A / cm￣2 at 77 K were achieved

关 键 词：YBaCuO film Yttria-stabilized zirconia Buffer layer 

分 类 号：TN305[电子电信—物理电子学]