Interface of YBa_2 Cu_3O_7 Thin Films Grown on Sapphire with Epitaxial Yttria-stabilized Zirconia Buffer Layer  

作　　者：陈岚峰 陈鹏飞 马平 袁冠森 

出　　处：《Rare Metals》1994年第4期306-309,共4页稀有金属（英文版）

摘　　要：Excellcnt epitaxial, highly coriented YBa_2Cua_3O_7 thin films were deposited successfully by dc sputteringon (1120) sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO_2(YSZ), which was grownby rf magnetron sputtering. The YBa_2Cu_3O_7 films exhibited the zero resistance temperature T_(co)= 92 K andcritical current density J_c= 1 .6 × 10￣6A / cm￣2 at 77 K in zcro ficld. The morphology and structure of the bufferlayers and YBa_2Cu_3O_7 / YSZ / sapphire interfaces were determined by using transmission electron microscopytechnique and Auger electron spectroscopy. The results of these studies show that a buffer layer is necessary forobtaining better YBa_2Cu_3O_7 films in preventing reaction between the YBa_2Cu_3O_7 film and the sapphiresubstrate and improving the lattice matching. The superconducting properties of YBa_2Cu_3O_7 films grown onYSZ / sapphire substrates are close to those on standard single crystal YSZ substrates and the sapphire is apromising substrate for passive microwave device application.Excellcnt epitaxial, highly coriented YBa_2Cua_3O_7 thin films were deposited successfully by dc sputteringon (1120) sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO_2(YSZ), which was grownby rf magnetron sputtering. The YBa_2Cu_3O_7 films exhibited the zero resistance temperature T_(co)= 92 K andcritical current density J_c= 1 .6 × 10￣6A / cm￣2 at 77 K in zcro ficld. The morphology and structure of the bufferlayers and YBa_2Cu_3O_7 / YSZ / sapphire interfaces were determined by using transmission electron microscopytechnique and Auger electron spectroscopy. The results of these studies show that a buffer layer is necessary forobtaining better YBa_2Cu_3O_7 films in preventing reaction between the YBa_2Cu_3O_7 film and the sapphiresubstrate and improving the lattice matching. The superconducting properties of YBa_2Cu_3O_7 films grown onYSZ / sapphire substrates are close to those on standard single crystal YSZ substrates and the sapphire is apromising substrate for passive microwave device application.

关 键 词：YBaCuO film dc sputtering YSZ. Buffer layer 

分 类 号：TN305[电子电信—物理电子学]