Photoluminescence Study on Defects in Neutron-Irradiation CZ-Silicon  

作　　者：李伟 刘彩池 徐岳生 

机构地区：[1]Material Research Center, Hebei Institute of Technology, Tianjin 300130, PRC

出　　处：《Chinese Science Bulletin》1993年第6期514-516,共3页

基　　金：Project supported by the National Natural Science Foundation of China.

摘　　要：1 Introduction In recent years, the irradiation defects in CZ-silicon have been studied extensively because the neutron-irradiation defects in CZ-silicon play a key role in controlling the yield and performance of VLSI circuits. However, because of the impurities (oxygen, about 10¹⁸ atoms/cm³) in silicon, behavior of irradiation-defects during heat-treatment has been proved to be complicated, while slices are subjected to neutrons irradiation and heat-treatment, the irradiation defect behavior has not been clearly understood yet.

关 键 词：NEUTRON-IRRADIATION CZ-silicon METASTABLE defects. 

分 类 号：N[自然科学总论]