MOCVD GaAs/AIGaAs Multiquantum Well Structures and Observation upon the Intersubband Absorption  

作　　者：徐现刚 黄柏标 任红文 刘士文 蒋民华 

机构地区：[1]Institute of Crystal Materials,Shandong Univ.,Jinan 250100,P.R.China

出　　处：《Rare Metals》1993年第4期260-263,共4页稀有金属（英文版）

基　　金：Work supported by the National Natural Science Foundation of China.

摘　　要：This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.This paper presents Atmospheric Pressure Metalorganic Chemical Vapor Deposition(AP-MOCVD) growth of GaAs/Al-xGa_(1-x)As multiquantum wells for the study of intersubband transition.The multiple quantum well structures are characterized by using cross-sectional transmission electron microscopy(TEM) and low temperature photoluminescence(PL),which are in consistent with the designed parameters.The in- frared absorption from intersubband transitions between the bounded- ground state and the extended excited state in GaAs/AtGaAs quantum wells shows peak at 10 μm with FWHM 250 cm^(-1).The absorption peak positions are in agreement with the calculated results based on the envelope function approximation.

关 键 词：MOCVD GaAs/AlGaAs quantum well Intersubband absorption 

分 类 号：TG146.4[一般工业技术—材料科学与工程]