Determination of Substitutional Carbon in SI-GaAs Thin Wafers by Infrared Microscope  

作　　者：何秀坤 王琴 汝琼娜 李光平 

机构地区：[1]Tianjin Electronic Materials Research Institute,P.O.Box 55,Tianjin 300192,China

出　　处：《Rare Metals》1993年第4期284-287,共4页稀有金属（英文版）

摘　　要：Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscope at room temperature for the first time. The experimental results showed that the carbon concentration in GaAs thin wafers can be measured directly with simple treatment. The calculation method of carbon concentration is in agreement with that for normal IR spectrum with 0.5cm-1 resolution. The resolution of 1cm-1 can be taken in order to obtain a high signal-to-noise (S/N) ratio using 2.34×1016 cm-2 calibration factor for calculating carbon concentration at room temperature.Determination of substitutional carbon in SI-GaAs thin wafers was investigated by FT-IR microscope at room temperature for the first time. The experimental results showed that the carbon concentration in GaAs thin wafers can be measured directly with simple treatment. The calculation method of carbon concentration is in agreement with that for normal IR spectrum with 0.5cm-1 resolution. The resolution of 1cm-1 can be taken in order to obtain a high signal-to-noise (S/N) ratio using 2.34×1016 cm-2 calibration factor for calculating carbon concentration at room temperature.

关 键 词：CARBON Composition CRYSTALS Infrared instruments MICROSCOPES 

分 类 号：TG146.4[一般工业技术—材料科学与工程]