LPE Growth of InAsPSb on InAs:Melt Composition,Lattice Mismatch and Surface Morphology  

作　　者：Zhang, Yonggang  Zhou, Ping  Chen, Huiying  Pan, Huizhen 

机构地区：[1] Shanghai Inst of Metallurgy, China

出　　处：《Rare Metals》1990年第1期46-51,共6页稀有金属（英文版）

基　　金：This project is supported by NSFC No.9687006.

摘　　要：The LPE growth of quaternary InAs11-x-yPxSby with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composition is very suitable for the laser and detector applications at about 2.5 μm. We show that in InAsPSb/InAs system there is a determinate relation between the surface morphology and the lattice mismatch of the epi-wafers, by which we can easily control the melt composition to grow high quality hetero-structures. The reason has been discussed. The p-n junctions with fairly good carrier profile have been prepared in this system.The LPE growth of quaternary InAs11-x-yPxSby with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composition is very suitable for the laser and detector applications at about 2.5 μm. We show that in InAsPSb/InAs system there is a determinate relation between the surface morphology and the lattice mismatch of the epi-wafers, by which we can easily control the melt composition to grow high quality hetero-structures. The reason has been discussed. The p-n junctions with fairly good carrier profile have been prepared in this system.

关 键 词：Indiumarsenic Phosphorus Antimony Alloys Surface Properties Laser Pulses Applications Optical Fibers Optical Properties Optics Nonlinear Semiconducting Antimony Compounds Energy Gap 

分 类 号：TG146.4[一般工业技术—材料科学与工程]