THEORETICAL ANALYSIS OF THE PRESSUREMAGNETO-ELECTRIC EFFECT OF JFET  

作　　者：温殿忠 

机构地区：[1]Heilongjinag University,Harbin

出　　处：《Journal of Electronics(China)》1990年第2期167-174,共8页电子科学学刊（英文版）

摘　　要：In this paper the pressure-magneto-electric effect of Junction Field Effect Transistor（JFET）is discussed by using standard relaxation techniques.A theoretical evaluation of thepressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries（W/L）,gate voltages(V_FS)and drain voltages(V_DS)is made.The results show that whenP≠0,B=0,the current-pressure sensitivity is about 2.5%.cm²/N,supposing W/L（?）1/2-1.Based on that,a junction field effect pressure sensor with high stability and low noise is designed.In this paper the pressure-magneto-electric effect of Junction Field Effect Transistor (JFET)is discussed by using standard relaxation techniques.A theoretical evaluation of the pressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries (W/L),gate voltages(V_(FS))and drain voltages(V_(DS))is made.The results show that when P≠0,B=0,the current-pressure sensitivity is about 2.5%.cm^2/N,supposing W/L(?)1/2-1. Based on that,a junction field effect pressure sensor with high stability and low noise is designed.

关 键 词：Tensoresistive EFFECT of JFET Pressure-magneto-electric EFFECT Relaxation techniques FINITE-DIFFERENCE numerical methods 

分 类 号：TN01[电子电信—物理电子学]