施加电场的单量子阱中束缚态的能级  

Structures of the energy levels of the bound states in a superlattice quantum well with an applied electric field

作　　者：文军[1] 

机构地区：[1]渭南师范学院物理与电子工程系,陕西渭南714000

出　　处：《浙江师范大学学报（自然科学版）》2011年第4期404-408,共5页Journal of Zhejiang Normal University:Natural Sciences

基　　金：陕西省教育厅科研计划项目(08JK287);渭南师范学院科研项目(11YKF017)

摘　　要：超晶格由2种不同晶体材料交替生长的具有周期性结构的多层薄膜构成,2种材料的"势垒-势阱"结构就是量子阱.通过理想的无限深势阱模型,讨论了施加电场作用的超晶格中单量子阱束缚态的能级结构和态密度,得到了体系的本征能量与本征函数.分析表明:沿超晶格生长方向能量量子化,量子化能量构成了一系列子能带(微带);在电场作用下,超晶格量子阱能级向低能方向移动,施加电场不影响超晶格量子阱子能带的电子态密度.Superlattice was constructed by alternate growth and periodic multilayer thin films consisted two different crystal materials.The potential barrier-potential trap structure of two kinds of materials was called quantum well.By adopting the ideal methods of the infinite potential,the structures of the energy levels and the density of bound states of the single quantum well in superlattice with an applied electric field were analyzed.The results showed that the eigen value and eigen function of the quantum well was acquired,the energy levels along the direction of superlattice growth was quantization,the quantized energy constitute a series of child energy bands,and the electron density was not affected by the adopted electric field.

关 键 词：超晶格 量子阱 态密度 电场 

分 类 号：O484[理学—固体物理]