基于Mie散射理论对砷化镓光子晶体安德森定域化研究  

Study on Anderson localization of photonic crystal of GaAs based on Mie scattering theory

作　　者：徐庆君[1] 庄申栋[1] 

机构地区：[1]枣庄学院光电工程学院,山东枣庄277160

出　　处：《强激光与粒子束》2011年第10期2613-2616,共4页High Power Laser and Particle Beams

基　　金：山东省优秀中青年科学家科研奖励基金项目(2008BS01021);枣庄市科技攻关计划项目(201031-2);2009年枣庄学院科技计划项目

摘　　要：基于Mie散射理论和低浓度近似,对砷化镓作为散射体光子晶体中的安德森定域化参量进行了理论计算,并分析了影响定域化现象的各种因素。结果表明:在散射体体积分数为10%,相对折射率大于3.8时,远红外区50～65μm范围内出现严格的定域化现象;随着散射体半径的增大,定域化区向长波方向移动,且定域化参量先增大后减小。Based on the Mie scattering theory and the low density approximation,the Anderson localization parameters of photonic crystal constituted by GaAs were calculated theoretically,and the factors which influenced the localization phenomenon were analyzed.The results show that strict Anderson localization phenomena appear in far infrared region（50~65 μm） under the conditions of volumetric percentage of 10% and relative refractive index greater than 3.8.With the increase of the scatterer radius,the localization area shifts to longer wavelength,and the localization parameter firstly increases and then decreases.

关 键 词：光子晶体 安德森定域化 MIE散射 砷化镓 

分 类 号：O434.3[机械工程—光学工程] O734[理学—光学]