Sb_2O_3掺杂对(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3无铅压电陶瓷性能的影响  

Effect of Sb_2O_3-doped on properties of lead-free piezoelectric ceramics(Na_(1-x)K_x)_(0.5)Bi_(0.5)TiO_3

作　　者：郭晨洁[1] 张昌松[1] 王珍[1] 

机构地区：[1]陕西科技大学机电工程学院,陕西西安710021

出　　处：《功能材料》2011年第B11期821-824,共4页Journal of Functional Materials

基　　金：陕西省教育厅基金资助项目(2010JK456);温州科技局基金资助项目(H20100030);陕西科技大学校内自选基金资助项目(ZX10-24)

摘　　要：采用传统工艺制备了（Na0.84K0.16）0.5Bi0.5TiO3压电陶瓷,研究掺杂离子Sb3＋对（Na0.84K0.16）0.5Bi0.5TiO3微观结构和电性能的影响。结果表明烧结温度在1160℃时,样品密度达到最大值5.85g/cm3;X射线衍射（XRD）分析所有陶瓷样品均为钙钛矿相,Sb2O3的掺杂只改变晶胞体积或产生铋离子空位或钠离子空位,不形成异相;掺杂量在0.4%~0.6%时介电常数先增加后减小,介电损耗呈现增大趋势;掺杂0.5%的Sb2O3时,d33最大为142pC/N。A new lead-free piezoelectric ceramics of（Na0.84K0.16）0.5Bi0.5TiO3 was prepared by conventional solid state reaction,the influence of Sb3＋ doping on microstruture and properties of the lead free piezoelectric ceramics was investigated.The results show that the sample density reaches maximum version 5.85g/cm3 sintered at 1160℃,all compositions are of pure perovskite structure solid state,Sb2O3 doping changes crystal cell dimension and produces Bi3＋ or Na＋ vacancy and without impurity phase;doping in 0.4%~0.6%,dielectric constant first increases,then decreases,dielectric loss present increasing trend;doping 0.5% Sb2O3,d33 appears maximum 142pC/N.

关 键 词：无铅压电陶瓷 钛酸铋钠 介电性能 压电性能 

分 类 号：TB332[一般工业技术—材料科学与工程]