离子注入型与金硅面垒型半导体探测器温度特性比较  

Temperature Characteristic Comparison between Ion-injection and Gold Silicon Surface Barrier Semi-conducting Detectors

作　　者：崔晓辉[1] 谷铁男[1] 张燕[1] 袁宝吉[2] 刘明健[1] 闫学昆[1] 

机构地区：[1]海军核化安全研究所,北京100077 [2]海军潜艇学院培训系,青岛266042

出　　处：《辐射防护通讯》2011年第2期26-28,共3页Radiation Protection Bulletin

摘　　要：半导体探测器性能受温度影响较大,影响着辐射探测系统的稳定性和测量精度。本文设计了一个温度测试电路,通过温度测试实验分别得出了离子注入型和金硅面垒型半导体探测器的温度特性曲线。测试结果表明,离子注入型半导体探测器的温度特性明显优于金硅面垒型半导体探测器。本文的结果可为半导体探测器的使用、筛选提供参考。The performance of semi-conducting detector is sensitive to temperature,which directly affects the stability and precision of spectrum system.A bias-voltage testing circuit,used for temperature characteristic testing was designed firstly,and then the characteristic curve between bias-voltage and temperature,for ion-injection detector and gold silicon surface barrier detector respectively,was ascertained.Experimental results show that the temperature characteristic of an ion-injection detector is much better than that of a gold silicon surface barrier detector.This method is valid for the use and selection of semi-conducting detector.

关 键 词：半导体探测器 温度特性 离子注入型 金硅面垒型 

分 类 号：TL814[核科学技术—核技术及应用]