低能量发火Ni-Cr薄膜桥制备及性能分析  

Preparation and Properties of Ni-Cr Thin Film Bridge with Low Firing Energy

作　　者：颜志红[1] 谢贵久[1] 景涛[1] 龚杰洪[1] 王科伟 章良 

机构地区：[1]中国电子科技集团公司第四十八研究所,湖南长沙410111 [2]北方特种能源集团有限公司庆华公司,陕西西安710025 [3]空军驻湖南军代室,湖南长沙410100

出　　处：《火工品》2011年第5期29-32,共4页Initiators & Pyrotechnics

摘　　要：介绍一种低能量Ni-Cr薄膜桥发火件的设计结构参数和工艺,薄膜桥设计尺寸为90μm×10μm×5μm,电阻值为(4.3±0.4)Ω,典型发火能量为4.1V/84μJ。在同批768个产品中抽样480个进行发火试验,结果表明:98%的样品可在4.5V/100μJ能量下引燃,100%的样品可在4.8V1 15μJ能量下引燃。The design process and parameters of thin film bridge initiating device is introduced in this paper, which owns low firing energy and is made by Ni-Cr alloy thin film. The size of thin film bridge is 90μm×10μm× 5μm. the statistical analysis of the resistance value is （ 4.3±0.4 ）Ω, and the typical firing energy is 4.1V/84μJ. 480 sample products in the same batch of 768 have been testedl and the result shows that fire ratio is up to 98% when the firing energy is 4.5V/100μJ, and the fire ratio reaches 100% when the firing energy is 4.8V/115μl.

关 键 词：薄膜 低能量 发火 NI-CR合金 

分 类 号：TJ450.2[兵器科学与技术—火炮、自动武器与弹药工程]