Preparation of TeO_x-SiO_2 film with excellent third-order nonlinear optical properties by electrochemically induced sol-gel method  被引量:6

Preparation of TeO_x-SiO_2 film with excellent third-order nonlinear optical properties by electrochemically induced sol-gel method

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作  者:Qiang Li Min Gu 

机构地区:[1]State and Local Joint Engineering Laboratory of Methane Drainage in Complex Coal Gas Seam, Key Lab for the Exploitation of Southwestern Resources and the Environmental Disaster Control Engineering of Education Ministry, College of Resources and Environmental Science, Chongqing University, Chongqing 400044, China

出  处:《Chinese Chemical Letters》2011年第11期1359-1362,共4页中国化学快报(英文版)

基  金:supported by Academic Program of Natural Science Foundation Project of CQ CSTC(No 2008BC4003);the Foundation of State Key Laboratory of Physical Chemistry of Solid Surfaces of Xiamen University(No2007)

摘  要:TeOx-SiO2 composite films having third-order nonlinearities were prepared by electrochemically induced sol-gel deposition method on ITO substrate.The third-order optical nonlinearities of the films were measured by Z-scan technique.The third-order nonlinear susceptibilities(χ^((3))) of the as-prepared films are 5.9×10^(-7) to 4.29×10^(-6)esu.The surface morphology and composition of the films were characterized by SEM/EDX,which identified that Te metallic particles well dispersed in TeO_x-SiO_2 gel films.TeOx-SiO2 composite films having third-order nonlinearities were prepared by electrochemically induced sol-gel deposition method on ITO substrate.The third-order optical nonlinearities of the films were measured by Z-scan technique.The third-order nonlinear susceptibilities(χ^((3))) of the as-prepared films are 5.9×10^(-7) to 4.29×10^(-6)esu.The surface morphology and composition of the films were characterized by SEM/EDX,which identified that Te metallic particles well dispersed in TeO_x-SiO_2 gel films.

关 键 词:TeOx-SiO2 composite Electrochemically induced sol-gel method Third-order nonlinearities Z-SCAN 

分 类 号:O631.24[理学—高分子化学] O484.1[理学—化学]

 

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