A novel high-voltage device structure with an N^+ ring in substrate and the breakdown voltage model  

作　　者：李琦 朱金鸾 王卫东 岳宏卫 晋良念 

机构地区：[1]Guangxi Key Laboratory of Information and Communication,Guilin University of Electronic Technology [2]Guilin Strong Micro Electronics Co.Ltd

出　　处：《Journal of Semiconductors》2011年第12期76-79,共4页半导体学报（英文版）

基　　金：Project supported by the Guangxi Natural Science Foundation,China(No.2010GXNSFB013054);the Guangxi Key Science and Technology Program,China(No.1 1107001-20).

摘　　要：A novel high-voltage device structure with a floating heavily doped N＋ ring embedded in the substrate is reported, which is called FR LDMOS. When the N＋ ring is introduced in the device substrate, the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N ＋ ring junction, and the vertical breakdown characteristic is improved significantly. Based on the Poisson equation of cylindrical coordinates, a breakdown voltage model is developed. The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.A novel high-voltage device structure with a floating heavily doped N＋ ring embedded in the substrate is reported, which is called FR LDMOS. When the N＋ ring is introduced in the device substrate, the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N ＋ ring junction, and the vertical breakdown characteristic is improved significantly. Based on the Poisson equation of cylindrical coordinates, a breakdown voltage model is developed. The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.

关 键 词：floating ring model breakdown voltage MODULATION 

分 类 号：TN386.1[电子电信—物理电子学]