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机构地区:[1]Institute of Semiconductors [2]Suzhou-CAS Semiconductors Integrated Technology Research Center [3]Department of Electrical & Computer Engineering,Auburn University
出 处:《Journal of Semiconductors》2011年第12期101-106,共6页半导体学报(英文版)
摘 要:A 2.4 GHz radio frequency receiver front end with an on-chip transformer compliant with IEEE 802.11b/g standards is presented. Based on zero-IF receiver architecture, the front end comprises a variable gain common-source low noise amplifier with an on-chip transformer as its load and a high linear quadrature folded Gilbert mixer. As the load of the LNA, the on-chip transformer is optimized for lowest resistive loss and highest power gain. The whole front end draws 21 mA from 1.2 V supply, and the measured results show a double side band noise figure of 3.75 dB, -31 dBm IIP3 with 44 dB conversion gain at maximum gain setting. Implemented in 0.13 μm CMOS technology, it occupies a 0.612 mm^2 die size.A 2.4 GHz radio frequency receiver front end with an on-chip transformer compliant with IEEE 802.11b/g standards is presented. Based on zero-IF receiver architecture, the front end comprises a variable gain common-source low noise amplifier with an on-chip transformer as its load and a high linear quadrature folded Gilbert mixer. As the load of the LNA, the on-chip transformer is optimized for lowest resistive loss and highest power gain. The whole front end draws 21 mA from 1.2 V supply, and the measured results show a double side band noise figure of 3.75 dB, -31 dBm IIP3 with 44 dB conversion gain at maximum gain setting. Implemented in 0.13 μm CMOS technology, it occupies a 0.612 mm^2 die size.
关 键 词:ZERO-IF direct-down-conversion WLAN CMOS RF on-chip transformer
分 类 号:TN386.1[电子电信—物理电子学] TN851
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