PZT厚膜的制备及电性能研究  

Study on the Fabrication and Electrical Properties of PZT Thick Films

作　　者：何超[1] 陈文革[1] 

机构地区：[1]西安理工大学材料科学与工程学院,陕西西安710048

出　　处：《压电与声光》2011年第6期982-985,共4页Piezoelectrics & Acoustooptics

摘　　要：用溶胶-凝胶法制备出锆钛酸铅(PZT)粉体,与流延胶以一定配比混合后流延成型,坯膜于1 100℃高温烧结2h得到PZT厚膜。利用XRD和SEM研究其组织结构,同时测试其相关电性能。结果表明,以10mL流延胶中加入120g PZT粉的配比进行流延较合适;得到厚度约为200μm的钙钛矿结构压电厚膜无裂纹、晶粒尺寸小且分布均匀,其压电常数d33为109pC/N。在1kHz测试频率下,其介电常数为179,介电损耗为0.4。The PZT powder was prepared by Sol-Gel processing and mixed with colloid in a certain proportion for the tape casting;blank films were sintered at 1 100 ℃ for 2 h.The microstructure and electrical properties of thick films were tested by scanning electron microscope（SEM） and X-ray diffraction（XRD）.The results showed that the proportion that 120 g PZT powder added in 10 mL colloid was fit for casting,piezoelectric thick film of 200 μm thickness with perovskite structure had no cracks,grain crystals were small and distributed equably and piezoelectric constant d33 reached 109 pC/N.Dielectric constant was 179 and dielectric loss was 0.4 at 1 kHz.

关 键 词：锆钛酸铅(PZT) 压电效应 厚膜 电性能 

分 类 号：TQ17[化学工程—硅酸盐工业]