IrMn基反铁磁自旋阀的巨磁电阻效应  

Giant magnetoresistance in IrMn based antiferromagnetic spin valve

作　　者：贾兴涛[1] 夏钶[1] 

机构地区：[1]北京师范大学物理学系,北京100875

出　　处：《物理学报》2011年第12期478-483,共6页Acta Physica Sinica

基　　金：中央高等学校基本科研基金(批准号:101-105115)资助的课题~~

摘　　要：用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L12相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序γ相IrMn合金的IrMn(0.84nm)/Cu(0.42nm)/IrMn(0.42nm)/Cu(0.42nm)(111)AFSV的电流平行平面构型的GMR约为7.7%,大约是电流垂直平面构型的GMR(3.4%)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR.According to the parameter-free first principles calculations,we investigate the spin polarized transport in antiferromagnetic spin valve （AFSV） based on noncollinear IrMn.The giant magnetoresistance （GMR） in Co/IrMn/Cu（111） with L12-type IrMn shows three-fold rotational symmetry,which is easy to be distinguished from the GMR of normal ferromagnetic spin valves.Moreover,GMR based on γ-phase IrMn with current-in-plane （CIP） structure shows that GMR is 7.7%,around two time larger than that in current-pendicular-to-plane （CPP） structure （3.4%）.Our study demonstrates that the AFSV CIP structure possesses a larger GMR effect than the CPP structure,and the GMR effect in AFSV based on noncollinear antiferromagnetic structure is larger than that based on collinear antiferromagnetic structure such as FeMn.

关 键 词：反铁磁自旋阀 巨磁电阻效应 非共线磁结构 电流平行平面结构 

分 类 号：O482.5[理学—固体物理]