CuI/Al双层电极的有机场效应晶体管  

Organic field-effect transistor with low-cost CuI/Al bilayer electrode

作　　者：聂国政[1,2] 彭俊彪[1,3] 周仁龙[2] 

机构地区：[1]华南理工大学高分子光电材料与器件研究所,广州510640 [2]湖南科技大学物理学院,湘潭411201 [3]华南理工大学特种功能材料及其制备新技术教育部重点实验室,广州510640

出　　处：《物理学报》2011年第12期518-523,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60937001;61036007);国家重点基础研究发展计划(批准号:2009CB930604;2009CB623604);国家高技术研究发展计划(批准号:2008AA03A335);湖南省教育厅科研基金(批准号:90C404)资助的课题~~

摘　　要：制备了CuI/Al为源极和漏电极的并五苯基场效应晶体管.相对于纯金属(Al,Au)电极的晶体管,所研制的晶体管的迁移率、阈值电压VT、开关电流比Ion/Ioff等参数都有明显改善.研究发现,在Al电极与并五苯半导体之间引入CuI作为空穴注入层,能够明显降低Al电极与并五苯之间的空穴注入势垒.紫外-可见光谱和X射线光电子能谱数据表明,这种空穴注入势垒的降低源自并五苯和Al向CuI的电子转移.An organic field-effect transistor based on pentacene semiconductor with CuI/Al bilayer electrode is investigated.The CuI layer,directly contacting the organic semiconductor layer,serves as the hole-injection layer.The overcoated metal layer is responsible for the reduction in contact barrier.Compared with the device with a single metal （Al,Au） layer used as the source-drain electrode,the device with CuI/Al electrodes considerably improves the hole mobility and the on/off current ratio and greatly reduces the threshold voltage.Results of X-ray photoelectron and ultraviolet/visible absorption studies reveal that the reduction in the contact barrier can be attributed to an electron transfer from pentacene and Al to CuI.

关 键 词：有机场效应晶体管 CuI/Al双层源漏电极 电子转移 

分 类 号：TN386[电子电信—物理电子学]