涂层导体用金属基带表面对过渡层成核的机理研究  

Effect of substrate topography for YBa_2Cu_3O_(7-x) coated conductors on the nucleation mechanism of buffer layer

作　　者：丁发柱[1] 古宏伟[1] 张腾[1] 戴少涛[1] 彭星煜[1] 周微微[1] 

机构地区：[1]中国科学院电工研究所,中国科学院应用超导重点实验室,北京100190

出　　处：《物理学报》2011年第12期532-538,共7页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2011CBA00105);国家自然科学基金(批准号:51002149)资助的课题~~

摘　　要：涂层导体用金属基带的表面状况对在其上制备的过渡层的形貌和取向有很大影响.在Ni单晶、轧制辅助双轴织构基带(RABiTS)Ni和经过硫化处理的Ni基带三种不同衬底上采用磁控溅射法制备了CeO2过渡层.结果表明,在Ni单晶和硫化处理的Ni基带上制备的CeO2薄膜取向较差,而在RABiTSNi上制备的CeO2薄膜完全呈c轴取向,表面平整致密.反射高能电子衍射图显示,RABiTSNi具有的c(2×2)的S超结构对CeO2薄膜的取向生长起到了很重要的作用.The surface condition of substrate tape is an important factor to obtain epitaxial buffer layer on biaxially textured Ni tape for YBa2Cu3O7-x coated conductors.We prepare ceria films on Ni single crystal,biaxially textured Ni tape and sulfured Ni substrates by direct current magnetron sputtering.The results show that the ceria films prepared on Ni single crystal and sulfured Ni substrates each have a poor-textured grain structure.However,the ceria film fabricated on rolling assisted biaxially textured substrate （RABiTS） exhibits a good c-axis texture and desirable surface morphology.Reflection high-energy electron diffraction analysis indicates that the c（2×2） superstructure on the RABiTS Ni surface has a dramatic effect on the heteroepitaxial growth of oxide buffer layer.

关 键 词：涂层导体 金属基带 超结构 过渡层 

分 类 号：TM26[一般工业技术—材料科学与工程]