Microstructure and microwave dielectric properties of lead borosilicate glass ceramics with Al_2O_3  

作　　者：韦鹏飞 周洪庆 王杰 张一源 曾凤 

机构地区：[1]College of Materials Science and Engineering, Nanjing University of Technology [2]College of Materials Engineering, Jinling Institute of Technology

出　　处：《Journal of Central South University》2011年第6期1838-1843,共6页中南大学学报（英文版）

基　　金：Project(2007AA03Z0455) supported by the National High Technology Research and Development Program of China;Project supported by the Priority Academic Program Development of Jiangsu Higher Education Institution, China

摘　　要：The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B203-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope （FTIR）, differential thermal analysis （DTA）, X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% （mass fraction） Al2O3-doped glass ceramics sintered at 725℃ have better properties of density p=2.72 g/cm3, dielectric constant Er=6.78, dielectric loss tan8=2.6×10^-3 （measured at 9.8 GHz）, which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.The effects of Al2O3 addition on both the sintering behavior and microwave dielectric properties of PbO-B2O3-SiO2 glass ceramics were investigated by Fourier transform infrared spectroscope (FTIR), differential thermal analysis (DTA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that with the increase of Al2O3 content the bands assigned to [SiO4] nearly disappear. Aluminum replaces silicon in the glass network, which is helpful for the formation of boron-oxygen rings. The increase of the transition temperature Tg and softening temperature Tf of PbO-B2O3-SiO2 glass ceramics leads to the increase of liquid phase precipitation temperature and promotes the structure stability in the glasses, and consequently contributes to the decreasing trend of crystallization. Densification and dielectric constants increase with the increase of Al2O3 content, but the dielectric loss is worsened. By contrast, the 3% (mass fraction) Al2O3-doped glass ceramics sintered at 725 °C have better properties of density ρ=2.72 g/cm3, dielectric constant εr=6.78, dielectric loss tan δ=2.6×10-3 (measured at 9.8 GHz), which suggest that the glass ceramics can be applied in multilayer microwave devices requiring low sintering temperatures.

关 键 词：PbO-B203-SiO2 glass ceramics AL2O3 Fourier transform infrared spectroscope MICROSTRUCTURE dielectric properties 

分 类 号：TQ174.1[化学工程—陶瓷工业]