激光辐照参数对光导型光电探测器响应的影响  

Influence of Laser Irradiation Parameters on the Response Characteristics of Photoconductive Detector

作　　者：杜立峰[1] 孙静[1] 张蓉竹[1] 

机构地区：[1]四川大学电子信息学院,成都610064

出　　处：《光电工程》2011年第12期120-123,129,共5页Opto-Electronic Engineering

摘　　要：文章针对激光照射下光导型碲镉汞光电探测器的响应特性展开了研究,主要讨论了强激光照射下辐照时间、波长及光功率密度对探测器响应特性的影响。从传统载流子的漂移扩散模型出发,在考虑温度的变化下推导出描述半导体载流子的动态方程,并通过数值模拟,给出了理论上的激光辐照主要参数对探测器电阻及输出电压的影响。结果表明:半导体探测器材料的热效应随辐照时间的增加而明显,随功率密度的增加而明显,但与波长的变化没有太大联系;输出电压随功率密度的增加而增加最终趋于饱和。The response characteristics of HgCdTe photoconductive detector have been discussed in detail.Several main laser irradiation parameters,such as irradiation time,wavelength and optical power density,are chosen to calculate response process of the detector.Based on traditional drift-diffusion model,an equation set with the variation of temperature is deduced to describe the semiconductor carriers＇ dynamics features.Using the numerical method,the resistance and the output voltage of the detector have been worked out.The calculation results show that：thermal effect of the semiconductor detector materials become more apparent with the increase of irradiation time and the power density,but not much changes with the wavelength.The output voltage increases with the increase of power density,and eventually become saturated.

关 键 词：光导型光电探测器 激光参数 响应特性 

分 类 号：TN211[电子电信—物理电子学]