Y_2O_3掺杂量对ZnO-Bi_2O_3-Nb_2O_5压敏陶瓷电性能的影响  

Effect of Y_2O_3 doping on Electrical Properties of ZnO-Bi_2O_3-Nb_2O_5-based Varistor Ceramics

作　　者：华小虎[1] 刘向春[1] 

机构地区：[1]西安科技大学材料科学与工程学院,西安710054

出　　处：《材料导报（纳米与新材料专辑）》2011年第2期335-337,共3页

基　　金：陕西省教育厅专项项目(08JK349);陕西省自然科学基金(SJ08ZT05-7)

摘　　要：通过掺杂Y2O3和优化烧结工艺制备了ZnO-Bi2O3-Nb2O5压敏陶瓷。利用XRD、SEM和VSR研究了Y2O3掺杂量对其电性能的影响。结果表明,随着Y2O3掺杂量增加,陶瓷电阻率ρ减小,非线性系数α增大;Bi2O3气氛下烧结(1170℃、保温2.5h)的陶瓷,当x(Bi2O3)和x(Nb2O5)为3%、y(Y2O3)为0.2%时,其致密度最大(4.4g/cm3),电阻率最小(461Ω.cm),电位梯度最小(5.5V/mm),α高达9.85。Y2O3-doped ZnO-Bi2O3-Nb2O5 varistor ceramics were prepared by means of optimizated sintering, and the effect of Y2O3 content on electrical properties were studied by using XRD, SEM, VSR. The results show that the density and the nonlinear coefficient of ceramic increase as Y2O3 content increasing, at the same time, the ceramic resistivity and potential gradient reduce. When Bi2O3, Nb2O5 content is 3mol% and Y2O3 content is 0. 2mol%, the ceramic sintered at 1170℃ for 2.5h under Bi2 O3 atmosphere exhibit a good property, maximum density （4. 4g/cm^3）, minimum resistivity （461Ω·cm）, minimum potential gradient（5.5V/mm） and high nonlinear coefficient （9.85）.

关 键 词：ZNO压敏陶瓷 掺杂 电学性能 非线性系数 Y2O3 

分 类 号：TB321[一般工业技术—材料科学与工程]