铜单晶拉伸试样表面滑移带痕迹的晶体塑性分析  

ANALYSIS OF SLIP-BAND TRACE ON SPECIMEN SURFACE OF SINGLE CRYSTAL COPPER UNDER TENSION

作　　者：石艳柯[1,2] 张克实[1] 

机构地区：[1]广西大学工程防灾与结构安全教育部重点实验室,南宁530004 [2]华北水利水电学院土木与交通学院,郑州450011

出　　处：《固体力学学报》2011年第6期557-565,共9页Chinese Journal of Solid Mechanics

基　　金：国家自然科学基金(90815001;11072064);广西大学科学基金资助

摘　　要：采用建立在晶体塑性理论基础上的晶体塑性有限变形计算方法,针对铜单晶试样单轴拉伸过程中晶体滑移在试样表面留下的滑移带痕迹进行了数值研究.作者利用三维有限元模拟不同取向铜单晶试样的拉伸变形,通过晶体塑性滑移面与试样表面交线的几何分析,得到了试样在不同晶向拉伸下不同滑移系启动造成的试样表面滑移痕迹,并对数值计算的试样表面滑移痕迹作了初步讨论.所得结果表明晶体塑性理论能够用于单晶试样拉伸试验的表面滑移带痕迹形成的分析.Based on the finite deformation theory of single crystal plasticity, the slip-band trace on the specimen surface of single crystal copper tensioned uniaxially is modeled by FEM with a finite deformation algorithm, and three dimensional plastic slipping is observed in computational simulation for single crystal copper specimen tensioned in different orientations. Through the geometric analysis of intersect-line between the active crystallographic slip-plane with specimen surface, we exhibit different slip-band traces on specimen surface, which are believed to come from different slip-planes activated by tension in different orientations. Good agreement between FEM results and experiment measurements indicate that the crystalline plasticity based computational simulation is available to study the formation of slip-band trace on the specimen surface of single crystal.

关 键 词：铜单晶 不同取向拉伸 滑移带痕迹 晶体塑性理论 

分 类 号：TG146.11[一般工业技术—材料科学与工程]