Ni^(2+)掺杂CdWO_4晶体的发光特性研究  

The luminescence properties of Ni^(2+)-doped CdWO_4 crystal

作　　者：钟月锋[1] 万云涛[1] 夏海平[1] 张约品[1] 

机构地区：[1]宁波大学光电子功能材料重点实验室,浙江宁波315211

出　　处：《功能材料》2011年第12期2241-2244,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50972061);浙江省自然科学基金资助项目(R4100364;Z4110072);宁波市自然科学基金资助项目(2009A610007)

摘　　要：应用坩埚下降法成功地生长出了Ni 2+掺杂的CdWO4单晶。测定了晶体的吸收与荧光光谱。根据晶体分裂场理论和吸收特性,计算了Ni 2+在该Cd-WO4晶体中的晶格场分裂参量Dq=1054cm-1、Racah参量B=1280cm-1与C=5982cm-1。在314nm光的激发下,观察到发光中心为480nm的蓝光,这是Cd-WO4晶体中WO66+中的电子跃迁所致。在808与980nm的激发下,均观察到发光中心分别为1068nm的近红外发射带,归结为和Ni 2+八面体格位的3 T2g(3F)→3 A2g(3F)能级跃迁。The Ni2＋-doped CdWO4（CWO） single crystals were grown by the vertical Bridgman technique.The absorption and emission spectra were measured.The crystal field strength of Ni2＋ doped CWO crystal,Dq=1054cm-1,the racah parameter B=1280cm-1 and C=5892cm-1 were calculated according to the absorption spectrum and crystal splitting theory.The emission band at 350-600nm was observed under excitation by 314nm,which were the intrinsic emission of WO6＋6.The emission band at 1068nm was observed under excitation by 808 and 980nm lights,which was attributed to the 3T2g（3F）→3A2g（3F） transition of Ni2＋ in octahedral sites.

关 键 词：光学材料 镍掺杂CdWO4晶体 近红外发光 荧光半高宽 

分 类 号：TB381[一般工业技术—材料科学与工程]