太阳能级硅激光刻槽埋栅电池的研究  

LASER GROOVED BURIED CONTACT SOLAR CELLS ON SOLAR - GRADE SILICON SUBSTRATES

作　　者：励旭东[1] 姬成周[1] 何少琪[2] 王玉亭[2] 赵玉文[2] 于元[2] 

机构地区：[1]北京师范大学低能核物理研究所,北京100875 [2]北京市太阳能研究所,北京100083

出　　处：《北京师范大学学报（自然科学版）》1999年第4期472-474,共3页Journal of Beijing Normal University(Natural Science)

摘　　要：探讨了廉价太阳能级硅材料对电池性能可能的影响，据此对激光刻槽埋栅电池的工艺加以优化．在此基础上制作的大面积太阳电池的转换效率达到１６．５９％．Solar- grade silicon substrated contain more oxygen, carbon and metal impuritiesthen semiconductor-grade, expedally FZ silicon. On the basis of the knoWledge about theoxygen behavior in various high temperature processes, improved conditions are carried out toenhance cell's performance. The Cell with 16.59% conversiton effidency has for obtained.

关 键 词：太阳能级硅 太阳能电池 激光刻槽电池 BCSC 

分 类 号：TM914.41[电气工程—电力电子与电力传动]