Near-wall conductivity effect under a space-charge-saturated sheath in the Hall thruster  

Near-wall conductivity effect under a space-charge-saturated sheath in the Hall thruster

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作  者:张凤奎 丁永杰 卿绍伟 吴限德 

机构地区:[1]College of Aerospace and Civil Engineering,Harbin Engineering University [2]HIT Plasma Propulsion Laboratory,Harbin Institute of Technology

出  处:《Chinese Physics B》2011年第12期293-297,共5页中国物理B(英文版)

基  金:supported by the Fundamental Research Funds for the Central Universities (Grant No. HEUCF100212);the National Natural Science Foundation of China (Grant Nos. 51007013,10875024,and 10975026)

摘  要:In this paper, we adopt the modified Morozov secondary electron emission model to investigate the influence of the characteristic of a space-charge-saturated sheath near the insulated wall of the Hall thruster on the near-wall conductivity, by the method of two-dimensional (2D) particle simulation (2Dq-3V). The results show that due to the sharp increase of collision frequency between the electrons and the wall under the space-charge-saturated sheath, the near-wall transport current under this sheath is remarkably higher than that under a classical sheath, and equals the near-wall transport current under a spatially oscillating sheath in order of magnitude. However, the transport currents under a space-charge-saturated sheath and a spatially oscillating sheath are different in mechanism, causing different current density distributions under the above two sheaths, and a great influence of channel width on the near-wall transport current under a space-charge-saturated sheath.In this paper, we adopt the modified Morozov secondary electron emission model to investigate the influence of the characteristic of a space-charge-saturated sheath near the insulated wall of the Hall thruster on the near-wall conductivity, by the method of two-dimensional (2D) particle simulation (2Dq-3V). The results show that due to the sharp increase of collision frequency between the electrons and the wall under the space-charge-saturated sheath, the near-wall transport current under this sheath is remarkably higher than that under a classical sheath, and equals the near-wall transport current under a spatially oscillating sheath in order of magnitude. However, the transport currents under a space-charge-saturated sheath and a spatially oscillating sheath are different in mechanism, causing different current density distributions under the above two sheaths, and a great influence of channel width on the near-wall transport current under a space-charge-saturated sheath.

关 键 词:saturated sheath CONDUCTIVITY CURRENT 

分 类 号:O53[理学—等离子体物理]

 

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