Formation of rippled surface morphology during Si/Si(100) epitaxy by ultrahigh vacuum chemical vapour deposition  

作　　者：胡炜玄 成步文 薛春来 苏少坚 王启明 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第12期328-334,共7页中国物理B（英文版）

基　　金：supported by the Major State Basic Research Program of China (Grant No. 2007CB613404);the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415);the National Natural Science Foundation of China(Grant Nos. 60676005,61036003,and 60906035);the Knowledge Innovation Program of the Chinese Academy of Sciences(Grant No. ISCAS2009T01)

摘　　要：The Si epitaxial films are grown on Si （100） substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature Tg are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with Tg increasing from 650 ℃ to 700℃. Rippled surface morphologies are observed at Tg = 700 ℃, 730 ℃, and 800℃, but disappear when Tg = 750℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.The Si epitaxial films are grown on Si （100） substrates using pure Si2H6 as a gas source using ultrahigh vacuum chemical vapour deposition technology. The values of growth temperature Tg are 650 ℃, 700 ℃, 730 ℃, 750 ℃, and 800 ℃. Growth mode changes from island mode to step-flow mode with Tg increasing from 650 ℃ to 700℃. Rippled surface morphologies are observed at Tg = 700 ℃, 730 ℃, and 800℃, but disappear when Tg = 750℃. A model is presented to explain the formation and the disappearance of the ripples by considering the stability of the step-flow growth.

关 键 词：step-bunching Ehrlich-Chwoebel barrier elastic repulsion fluctuation 

分 类 号：TN304.12[电子电信—物理电子学]