Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance  

作　　者：陈跃宁 徐征 赵谡玲 尹飞飞 张成文 焦碧媛 董宇航 

机构地区：[1]Institute of Optoelectronics Technology,Beijing Jiaotong University [2]Key Laboratory of Luminescence and Optical Information of the Ministry of Education,Beijing Jiaotong University [3]Physics Department,Liaoning University

出　　处：《Chinese Physics B》2011年第12期385-388,共4页中国物理B（英文版）

基　　金：Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704);the National Natural Science Foundation of China (Grant Nos. 10974013 and 60978060);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090009110027);the Natural Science Foundation of Beijing,China (Grant No. 1102028);the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60825407);Beijing Municipal Science and Technology Commission (Grant No. Z090803044009001)

摘　　要：In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.

关 键 词：organic thin-film field-effect transistor alternating-current resistance Ohmic contact 

分 类 号：TN386[电子电信—物理电子学]