The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses  

作　　者：马晓华 焦颖 马平 贺强 马骥刚 张凯 张会龙 张进成 郝跃 

机构地区：[1]School of Technical Physics,Xidian University [2]Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2011年第12期395-399,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities (Grant No. K50510250006)

摘　　要：In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.

关 键 词：inverse piezoelectric effects degradation mechanisms hot electron effects DC electrical step stresses AlGaN/GaN HEMTs reliability 

分 类 号：TN32[电子电信—物理电子学] TN304.23