Mg质量分数及缓冲层对ZnMgO∶Ga薄膜性能的影响  

Effect of Mg content and buffer layer on properties of ZnMgO:Ga thin films

作　　者：袁伟[1] 朱丽萍[1] 曹铃[1] 叶志镇[1] 

机构地区：[1]浙江大学材料科学与工程学系,硅材料国家重点实验室,浙江杭州310027

出　　处：《浙江大学学报（工学版）》2011年第11期2050-2054,2062,共6页Journal of Zhejiang University：Engineering Science

基　　金：国家自然科学基金资助项目(50772099);教育部博士点基金资助项目(J20100007)

摘　　要：为了解决氧化锌在柔性电子器件应用方面的问题,利用脉冲激光沉积法(PLD)在聚对苯二甲酸乙二醇酯(PET)柔性衬底上室温下制备镓掺杂氧化锌(ZnO∶Ga)和镓掺杂Zn1-xMgxO(Zn1-xMgxO∶Ga)透明导电薄膜,采用X射线衍射仪(XRD),扫描电镜,霍尔效应测试仪,紫外-可见光分光光度计对结构和性能进行表征,探讨靶材中镁质量分数对薄膜结构及光电性能的影响,并采用预沉积ZnO无机缓冲层法来改善薄膜样品的性能.研究结果表明,在柔性衬底上通过优化生长参数制备出性能良好的ZnO基透明导电薄膜,通过缓冲层的预沉积可以明显改善薄膜的结构和电学性能,薄膜电阻率最低可至8.27×10-4Ω.cm,在可见光区平均透射率超过70%.To solve the problem on ZnO applied in flexible opt-electronic devices,transparent conducting ZnO： Ga and Zn1-xMgxO∶Ga films were deposited on flexible Polyethylene Terephthalate（PET） substrates by Pulsed Laser Deposition.XRD,SEM,Hall effect measurement,and UV-VIS-IR spectrophotometer were used to characterize the films,and the structural,electrical and optical properties of the films with different Mg concentration were studied.Then the method of buffer layer pre-deposition was used to improve the performance of the films.The results show that the ZnO-based transparent conducting thin films were obtained on flexible substrate by PLD method,and the structural,electrical properties of the films were obviously improved by buffer layer pre-deposition.The lowest electrical resistivity of the films we prepared is 8.27×10-4Ω·cm and the transmittance is more than 70% in the visible region.

关 键 词：PLD 柔性衬底 镓掺杂锌镁氧 透明导电薄膜 

分 类 号：O484[理学—固体物理]