低噪声放大器有意电磁干扰效应(英文)  

LNA malfunctions under intentional electromagnetic interference

作　　者：汪海洋[1] 周翼鸿[1] 李家胤[1] 许立刚[1] 于秀云[1] 

机构地区：[1]电子科技大学物理电子学院,成都610054

出　　处：《强激光与粒子束》2011年第11期2865-2871,共7页High Power Laser and Particle Beams

基　　金：supported by National High-Tech Research and Development Program

摘　　要：低噪声放大器(LNA)是高功率微波"前门"效应典型薄弱器件之一。通过SPICE效应电路建模、模拟计算和注入实验,研究了LNA在不同微波脉宽、功率参数下其增益压制效应规律。模拟结果与实验数据获得良好一致,表明基于SPICE电路模型微波效应研究方法的有效性。研究表明,LNA增益压制脉宽随注入微波脉冲脉宽的增大具有饱和效应,该饱和值基本等于LNA直流偏置电路RC时间常数,并且出现饱和现象对应注入微波脉宽拐点约为150～250ns。最后,给出了LNA微波脉冲效应定性物理解释和机理探讨。This paper studies low noise amplifier（LNA） failures under intentional electromagnetic environment（IEME） through SPICE simulation and direct injection experiment.The classic single-stage studied has strong gain suppression effects when superimposed with high-power microwave（HPM） pulse at input port.Both theoretical and experimental results obtained highlight that the SPICE model can be used to assess IEMI effects.The LNA gain-suppression duration will keep the maximum value when the injected microwave pulse width exceeds its threshold for fixed pulse power level.The duration can be well estimated by the RC constant of transistor base bias circuit.Finally,the mechanism of such LNA failure is discussed.

关 键 词：低噪声放大器 有意电磁干扰 高功率微波 直接注入实验 

分 类 号：TN97[电子电信—信号与信息处理]