相对论速调管放大器杂模振荡的抑制  

Suppression of parasitic mode oscillation in relativistic klystron amplifier

作　　者：张泽海[1] 舒挺[1] 张军[1] 刘静[1] 朱俊[1] 

机构地区：[1]国防科学技术大学光电科学与工程学院,长沙410073

出　　处：《强激光与粒子束》2011年第11期2989-2993,共5页High Power Laser and Particle Beams

基　　金：国家高技术发展计划项目;国家自然科学基金项目(11075211);湖南省高校科技创新团队基金项目

摘　　要：研究了相对论速调管放大器(RKA)输入腔和中间腔之间的高阶杂模振荡问题。通过模式分析得知杂模在谐振腔内为TM11模式,而在漂移管中表现为TE11模式,针对该模式能在漂移管中传输的特性,利用漂移管内壁涂覆吸波材料吸收杂模功率的方法进行抑制。通过3维粒子模拟程序,分析了吸波材料的电导率及涂覆长度对抑制杂模增长率的影响。利用模拟分析得到的结果,对漂移管中涂覆吸波材料的RKA输入腔及中间腔结构进行了3维模拟研究,结果显示:合适的吸波材料的引入能够很好地抑制RKA输入腔和中间腔之间的杂模振荡。The paper studies the higher order parasitic mode oscillation in input cavity and idler cavity of relativistic klystron amplifier（RKA）.The parasitic mode in resonant cavity is proved to be TM11 mode,which is transformed into TE11 mode in drift tube.According to the transporting property of the parasitic mode in drift tube,the microwave attenuating material placed in the inner wall of drift tube is adopted to suppress the parasitic mode oscillation.The suppression of parasitic mode growth is also analyzed with microwave attenuating material of different conductivity and length.The three dimensional simulation of an RKA with attenuating material is carried out,and the results show that the introduction of proper microwave attenuating material can well suppress parasitic mode oscillation.

关 键 词：相对论速调管放大器 杂模振荡 吸波材料 电导率 涂覆长度 

分 类 号：TN122[电子电信—物理电子学]