单晶硅太阳能电池的背场钝化技术研究  

Back surface passivation method of mono silicon solar cell

作　　者：朱冉庆 王栩生[1] 章灵军[1] 

机构地区：[1]苏州阿特斯阳光电力科技有限公司

出　　处：《中国建设动态（阳光能源）》2011年第6期60-62,共3页

摘　　要：太阳能的应用是解决能源与环境问题的有效途径,而高转换效率低成本,易于产业化的高效电池技术是太阳电池发展的目标。近年来高转换效率技术层出不穷,例如SE电池(Selective emitter Cell),MWT电池(Metal warp through cell)和EWT电池(Emitter Warp through cell)等。这些高效电池均采用了良好的钝化技术。而常规晶硅太阳电池由于没有采用背场钝化技术,只使用铝背场,而经过烧结形成的铝硅合金背表面在减少复合和背反射效果方面有很大的局限性,并且铝硅合金区本身即高复合区,限制了电池效率的进一步提高。因此为了进一步提高开路电压及短路电流,对硅基背表面进行钝化是很有必要的。通过试验,着重比较了SiNx背场钝化层和SiO2背场钝化层对电池电性参数的影响和变化趋势。通过对电池片IQE分析发现,在使用了SiO2或SiNx背场钝化层后,长波区域的IQE响应相比正常电池片有明显提升,说明SiO2或SiNx确实起到钝化作用。而再对电性参数分析后发现,SiO2与SiNx相比可以有效提高电池的Rsh,降低反向电流。同时在EFF测试方面,SiO2与SiNx相比,也具有一定的优势。Application of solar energy is an effective and positive method to solve the environment and energy crisis nowadays. High efficiency, low cost and easily mass production is the ultimate goal of the solar cell development. In recent years, many high efficiency cell technologies have been introduced into mass production, such as selective emitter cell, metal warp through cell and emitter warp through cell, etc. Apart from SiNx layer, all these high efficiency cell technologies contain other passivation layers, which can increase efficiency absolutely. While in regular cell technology, no other passivation layer is used. For regular cell technology, full A l back surface has its limitation in reducing compounding center and the effect of back surface reflection after SiNx sintering. Also Al-Si layer itself is the high compound layer which can limit the increasing in efficiency directly. So it is important and necessary to passivate back surface in order to increase EFE In this paper, we compare the differences between SiNx and SiO2 passivation layer in affecting the electrical parameter via experiments.First, according to the result, we discovered all the SiNx and SiO2 can increase IQE response in the long ware zone comparing with regular cell （wavelength〉lOOOnm） as passivation layer. Second, compared with SiNx layer, SiO2 passivation layer can increase shunt resistance and reduce reverse current. Also, in EFF test, SiO2 passivation layer shows better performance than SiNx.

关 键 词：钝化 SiNx背场 SiO2背场 IQE响应 

分 类 号：TM914.41[电气工程—电力电子与电力传动]