Nb_2O_5掺杂量对ZnO压敏电阻器性能的影响  

Effects of Nb_2O_5 doping on the properties of ZnO varistors

作　　者：杨小妮[1] 傅刚[1] 陈环[1] 翟旺建[1] 刘志宇[1] 

机构地区：[1]广州大学物理与电子工程学院,广东广州510006

出　　处：《电子元件与材料》2012年第1期20-23,共4页Electronic Components And Materials

摘　　要：通过掺杂微量Nb2O5制备了ZnO压敏电阻器,运用扫描电子显微镜(SEM)和电性能测试手段分析了Nb2O5掺杂对ZnO压敏电阻器微观结构和电性能的影响,测量了晶界势垒高度φH,并探讨了其对ZnO压敏电阻器性能的影响。结果表明:掺杂适量的Nb2O5可以明显改善ZnO压敏电阻器的微观结构和电性能;当Nb2O5的掺杂量为摩尔分数0.10%时,所制ZnO压敏电阻器的晶粒尺寸最大,且压敏电压V1mA、非线性系数α和φH值分别为174V,30和0.463 eV。ZnO varistors were prepared by doping micro-Nb2O5. The effects of Nb2O5 doping on the microstructures and electrical properties of prepared ZnO varistors were analyzed by SEM and electrical measurements. The barrier height of grain boundary （φH）was measured and the effects ofφ 11 on the properties of ZnO varistors were investigated. The results show that the microstructures and electrical properties of ZnO varistors could be improved by doping proper amount of Nb2O5; when the Nb2O5 doping amount is 0.10% （mole fraction）, the grain size of prepared ZnO varistor is the biggest, meanwhile, the values of varistor voltage （V1mA）, nonlinear coefficient （a） and φH are 174 V, 30 and 0.463 eV, respectively.

关 键 词：ZNO NB2O5 压敏电阻 晶界势垒高度 

分 类 号：TN604[电子电信—电路与系统]