溶胶-凝胶法制备Zn^(2+)掺杂MgO薄膜及光电性能表征  

Preparation and Optoelectronic Properties of Zn-Doped MgO Films by Sol-Gel Method

作　　者：李鹏[1] 林祖伦[1] 王小菊[1] 赵启义[1] 赵文中[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《电子器件》2011年第6期633-636,共4页Chinese Journal of Electron Devices

基　　金：中央高校基本科研业务费专项资金(ZYGX2010J062)

摘　　要：采用溶胶-凝胶(Sol-Gel)法,利用旋转涂覆技术在玻璃衬底及单晶Si(111)衬底上制备掺Zn2+的MgO薄膜。使用紫外可见光分光光度计测定掺杂薄膜的透过率,并采用XRD和EDS等测试手段研究薄膜的晶向结构和成分。结果表明,胶棉液的含量对成膜质量有重要的影响;随着Zn2+掺杂量的提高,薄膜透过率先增大后减小,在掺杂量为10%时,薄膜有最佳透过率;随着退火温度的升高,薄膜晶粒生长没有出现明显的择优取向。最后,对模拟放电单元进行放电测试,结果表明,在掺杂量为10%时,薄膜有最低着火电压和最高的记忆系数。The MgO films doped with Zn2＋ were prepared on glass and single crystal Si（ 111 ）substrates using sol-gel spin coating technique. The transmission coefficient of the films was measured by UV-VIS spectrometer. The XRD, EDS analysis techniques were used to detetine the structure and component of the films. It is proved that the collodion has significant influence on the films＇ quality. With increasing the doping Zn2＋ concentration, the transmission coefficient increases first and then descends. There exists a best transmission coefficient when 10% Zn2＋ doped in the MgO films. XRD result indicates the thin films have no preferred orientations when increasing the annealing temperature. Finally, the discharging test results show that at 10% doping concentration, there are a minimum firing voltage and a maximum memory coefficient.

关 键 词：溶胶-凝胶 掺杂 MGO 透过率 放电 

分 类 号：TN304.055[电子电信—物理电子学]