一款结构新颖的2GHz～8.5GHz宽带放大器  

A Novel 2 GHz～8.5 GHz Broadband Amplifier

作　　者：李昕[1] 杨涛[1] 陈良月[1] 俞汉扬 高怀[3] 

机构地区：[1]东南大学集成电路学院,南京210096 [2]苏州英诺迅科技有限公司&苏州市射频功率器件及电路工程技术研究中心,江苏苏州215123 [3]东南大学国家ASIC系统工程技术研究中心,南京210096

出　　处：《电子器件》2011年第6期677-680,共4页Chinese Journal of Electron Devices

基　　金：2010年江苏省科技型企业技术创新资金项目(SBC201010291)

摘　　要：提出了一种拓展带宽的新型电路拓扑结构,该结构由四级射极跟随器级联而成,通过自适应有源偏置电路调节各级晶体管跨导,以及改变级间电感与后一级射极跟随器的结电容Cbe谐振峰的频率位置来拓展带宽。对其工作原理和稳定性进行了分析,并基于2μm InGaP/GaAs HBT工艺,设计了应用此结构的宽带放大器。仿真结果表明:新型电路拓扑结构能有效地扩展带宽,提高增益。在2 GHz～8.5 GHz的频率范围内,增益达到20 dB,增益平坦度小于±0.5 dB,P1 dB点输出功率大于17 dBm。A novel circuit structure of amplifier with the performance of wide bandwidth was designed, which consists of four cascaded emitter-followers. The bandwidth is expanded by adjusting each stage of transistor transcon- ductance by adaptively active bias circuit, and controling the resonant frequency, which is realized by adjusting inter-stage inductors and the junction capacitance Cbe of the next emitter-followers. The principle and stability of this structure were analyzed in detail. A broadband amplifier of this novel structure was designed based on 2 p,m InGaP/ GaAs HBT technology. Simulation results show that the new circuit structure can effectively improve gain-bandwidth product. In 2 GHz ～8.5 GHz frequency range, the gain of this broadband amplifier could be up to 20 dB with a gain flatness less than ±0.5 dB ,and the output power at 1 dB gain compression is more than 17 dBm.

关 键 词：放大器 宽带 射极跟随器 稳定性 

分 类 号：TN722.1[电子电信—电路与系统]