含有Al组分阶变AlGaN过渡层的Si基AlGaN／GaNHEMT  

AlGaN/GaN HEMT on Si Substrate with Al-content Step-graded AlGaN Transition Layers

作　　者：倪金玉[1] 董逊[1] 周建军[1] 孔岑[1] 李忠辉[1] 李亮[1] 彭大青[1] 张东国[1] 陆海燕[1] 耿习娇[1] 

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2011年第6期527-531,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61106130)

摘　　要：采用一个AlN缓冲层和两个Al组分阶变的AlGaN过渡层作为中间层,在76.2mm Si衬底上外延生长出1.7μm厚无裂纹AlGaN/GaN异质结材料,利用原子力显微镜、X射线衍射、Hall效应测量和CV测量等手段对材料的结构特性和电学性能进行了表征。材料表面平整光滑,晶体质量和电学性能良好,2DEG面密度为1.12×1013cm-2,迁移率为1 208cm2/(V.s)。由该材料研制的栅长为1μm的AlGaN/GaN HEMT器件,电流增益截止频率fT达到10.4GHz,这些结果表明组分阶变AlGaN过渡层技术可用于实现高性能Si基GaN HEMT。A 1.7 μm thick, crack-free AlGaN/GaN heterostructure had been grown on 76.2 mm diameter Si substrate by using an AlN buffer layer and two Al-content step-graded AlGaN transition layers （TL）. The structural and electrical properties of the AlGaN/GaN heterostructure were characterized by atomic force microscopy, X-ray diffractometer, Hall and capacitancevoltage measuring instruments. The AlGaN/GaN heterostructure containing the step-graded AlGaN TL exhibited flat surface morphology and good crystalline quality. An electron mobility of 1 208 cm2/（V·s） with sheet carrier density of 1.12 × 10^13cm-2 was measured on the heterostructure. High electron mobility transistors （HEMTs） with 1 μm gate lengths were fabricated by this heterostructure. A current gain cutoff frequencies （fa-） of 10. 4 GHz was obtained on the AlGaN/ GaN HEMTs. These results show that Al-content step-graded AlGaN transition layers could be used to achieve GaN HEMTs on Si substrate with high performance.

关 键 词：硅衬底 铝镓氮/氮化镓 高电子迁移率晶体管 过渡层 

分 类 号：TN304.2[电子电信—物理电子学] TN386