掺铒Al_2O_3/Si多层薄膜中纳米晶Si的形成和敏化效应  

Formation and Sensitizing Effects of Silicon Nanocrystals in Er-doped Al_2O_3/Si Multilayers

作　　者：章新栾[1] 王军转[1] 杨森林[1] 杨明珠[2] 陆昉[2] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学电子科学与工程学院,南京210093 [2]复旦大学物理系,上海200433

出　　处：《固体电子学研究与进展》2011年第6期581-585,共5页Research & Progress of SSE

基　　金：国家"973"计划资助项目(2007CB936300);国家自然科学基金资助项目(60990314;61076005);江苏省自然科学基金资助项目(BK2007146)

摘　　要：采用脉冲激光沉积制备了掺铒Al2O3/Si多层薄膜,在淀积过程中脉冲激光溅射产生的高能量Er原子渗透进入非晶硅层,并引入了额外的应力,在低退火温度下诱导形成纳米晶Si。利用纳米晶Si作为敏化剂有效地增强了Er3+在Al2O3中的光致发光。样品微观结构和发光强度的关系表明,获得高密度和小尺寸的纳米晶Si和Er3+处于良好的发光环境是实现优化发光的关键,最优化的Er3+发光强度在退火温度为600℃的条件下得到。Er-doped Al2O3Si muhilayers have been fabricated by pulsed laser deposition. Thanks to the presence of energetic Er species produced by pulsed laser deposition, a shallow implantation of Er atoms into Si layers is achieved during the deposition process. The doped Er atoms induce additional strains in the amorphous Si layers and serve as nucleation centers to induce the formation of Si nanocrystals at low annealing temperatures. When Si nanocrystals are introduced as sensitizers, the photoluminescence of Er3＋ in Al2O3 is greatly enhanced. The optimized photoluminescence is achieved at annealing temperature of 600℃, where a high density of small Si nanocrystals and a good local environment of Er3＋ are crucial, then the photoluminescence gradually decreases as the annealing temperature increases.

关 键 词：纳米晶硅 ER3+ 光致发光 敏化效应 

分 类 号：TN304.12[电子电信—物理电子学] TN213