Ga掺杂ZnO导电粉的制备与工艺优化  

The Optimum Preparation Conditions of Ga-doped Conductive Zinc Oxide Powder

作　　者：李燕[1,2] 郑冀[1,2] 王鑫[1,2] 

机构地区：[1]天津大学材料科学与工程学院,天津300072 [2]天津市材料复合与功能化重点实验室,天津300072

出　　处：《电工材料》2011年第4期36-39,共4页Electrical Engineering Materials

摘　　要：通过正交实验设计,对Ga掺杂ZnO导电粉的制备工艺进行优化,确定出其最优参数为:掺杂比2mol%,反应温度85℃,反应时间10 h,煅烧温度550℃。利用XRD、SEM和XPS对样品的性能进行检测,结果表明,按此条件制备的掺杂样品,经测量其电阻率为3.3×104Ω.cm。eAbstract：The optimum treatment conditions were got by using the orthogonal experimental design,confirmed that doping ratio for 2mol%,reaction temperature for 85 ＂C , reaction time for 10h, the calcining temperature for 550~C.XRD, SEM, and XPS were used to charac- terize the synthesized ZnO particl. It was found that the volume resistivity of the zinc oxide, decreases to 3.3×10^4Ω.cm

关 键 词：Ga掺杂 ZnO导电粉 正交实验 均相沉淀 

分 类 号：TM241[一般工业技术—材料科学与工程] TM205.1[电气工程—电工理论与新技术]