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作 者:倪蔚德[1] 吴有智[1] 张文林[1] 张材荣[2] 张定军[1]
机构地区:[1]甘肃省有色金属新材料省部共建国家重点实验室,兰州理工大学材料科学与工程学院,甘肃兰州730050 [2]兰州理工大学理学院应用物理系,甘肃兰州730050
出 处:《发光学报》2011年第12期1271-1275,共5页Chinese Journal of Luminescence
基 金:甘肃省自然科学基金(1010RJZA035);教育部留学回国人员科研启动基金(第40批);国家自然科学基金(11164015,11164016)资助项目
摘 要:以典型蓝色发光材料-联苯乙烯衍生物(4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl,DPVBi)为发光层,采用MoO3为阳极缓冲层制备了结构简单的非掺杂型蓝色有机电致发光器件。在电流密度为20 mA/cm2、MoO3缓冲层厚度为0.5 nm对器件效率约为无缓冲层器件效率的18倍,为通常酞菁铜(Copper phthalocya-nine,CuPc)缓冲层器件效率的1.2倍。器件启亮电压为3.3 V,最高外量子效率为3.1%,最高亮度达到16 000 cd/m2,器件CIE色坐标(Commission Internationale de l'Eclairage co-ordinates)为(0.15,0.15)。器件性能的提升归因于MoO3缓冲层的插入在阳极/有机层间形成了良好的欧姆接触。Contact properties between electrodes and organic layers play a key role for the performance of an organic device.Ohmic contacts at electrode/organic interfaces are required for an ideal device.In order to improve performance of 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl(DPVBi,a typical blue organic luminescent material) based organic light-emitting diode,MoO3 was introduced at anode interface as a buffer layer and a highly efficient bright nondoped blue electroluminescent device with low driving voltage was fabricated.Luminescent efficiency of the device with a 0.5-nm-thick MoO3 buffer layer is 18 times higher than that of the device without buffer layer,and 1.2 times higher than that of the device with a conventional copper phthalocyanine(CuPc) buffer layer at a current density of 20 mA/cm2.Turn-on voltage,maximum external quantum efficiency and luminance of the device are 3.3 V,3.1% and 16 000 cd/m2,respectively.Commission Internationale de l'Eclairage(CIE) co-ordinates are(0.15,0.15).Realization of excellent device performance is attributed to formation of ohmic contact between anode and organics by insertion of MoO3.
分 类 号:TN383.1[电子电信—物理电子学]
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