半导体激光器腔面增透膜AlN薄膜的制备  

Deposition of AlN Film for AR Coating of Semiconductor Lasers

作　　者：周路[1] 王云华[1] 贾宝山[1] 白端元[1] 张斯钰[1] 乔忠良[1] 高欣[1] 薄报学[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2011年第12期1292-1296,共5页Chinese Journal of Luminescence

摘　　要：提出了一种新的半导体激光器增透膜———AlN膜,并用matlab软件模拟分析了不同腔面反射率对激光器输出功率的影响,得到激光器最大输出功率时前后腔面的反射率的最佳值。采用反应磁控溅射技术,利用高纯铝靶(99.999%)和N2+Ar的混合气体在K9玻璃基片上沉积了AlN薄膜。利用Filmetrics系统对薄膜进行光学性能测试,分析了不同工艺参数对薄膜沉积速率和折射率的影响。将最优条件下制得的AlN单层增透膜用于半导体激光器上,光学灾变损伤阈值和器件输出功率都得到了很大的提高。The relationship between output power and reflectance of the cavity surface was simulated.Simulation results showed that,when the reflectance of cavity surface coatings took the optimum value,the output power of the semiconductor lasers diode reached the maximum.AlN film were deposited on K9 glass substrates by magnetron sputtering using high-purity Al target and N2＋Ar.The influence of sputtering conditions,including working pressure,nitrogen concentration,sputtering power on its deposition rate and optical properties has been studied.The optimized AlN coating was used in semiconductor lasers,we found that the COD threshold and the output power have been greatly improved.

关 键 词：增透膜 折射率 溅射 灾变性光学损伤 

分 类 号：TN248.4[电子电信—物理电子学]