双因素方差分析模型在霍尔测量中的应用  

Application of Two-factor Variance Analysis Model in the Hall Measurement

作　　者：罗明海[1] 韩亚萍[1] 张凯[2] 侯纪伟[3] 王金鑫[1] 高雪连[1] 

机构地区：[1]东北林业大学,黑龙江哈尔滨150040 [2]太原科技大学,山西太原030024 [3]中国科学技术大学,安徽合肥230026

出　　处：《大学物理实验》2011年第6期90-92,共3页Physical Experiment of College

摘　　要：在测量半导体材料的霍尔效应实验中,研究霍尔电压在不同温度和不同磁场强度下变化情况。文章通过建立双因素方差分析数学模型对实验数据进行分析,判断不同的实验条件对实验结果是否有显著影响。In the experiment of the measurement of semiconductor materials Hall effect,the Hall voltage changes at different temperatures and different magnetic field strengths are often studied,Hall voltage was always fluctuated.This article established the two-factor variance analysis mathematical models to analyze the experimental data,to determine whether the results of the experiment had significant effects under different experimental conditions.

关 键 词：双因素方差分析 霍尔效应 霍尔电压 

分 类 号：O411.1[理学—理论物理]