脉冲电压幅值对等离子体化学气相沉积TiN薄膜膜基结合行为的影响  

EFFECT OF PULSED VOLTAGE ON INTERMFACIAL BONDING BEHAVIOR OF TiN COATINGS PREPARED BY PULSED DC PLASMA CHEMICAL VAPOR DEPOSITION

作　　者：马胜利[1] 李雁淮[1] 徐可为[1] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,西安710049

出　　处：《金属学报》2000年第1期77-80,共4页Acta Metallurgica Sinica

基　　金：国家863高技术项目!7150080060;西安交通大学博士基金!DFXJU1999-7

摘　　要：用工业型脉冲等离子体化学气相沉积（ＰＣＶＤ）设备、在高速钢（Ｗ１８Ｃｒ４Ｖ）和钴基硬质合金 ＳＣ３０基材表面沉积了 ＴｉＮ薄膜，用扫描电镜（ＳＥＭ）和连续加载压入仪研究了脉冲电压幅值对膜基结合行为的影响．结果表明随脉冲电压在５５０－７５０ Ｖ之间逐渐增大， ＴｉＮ晶粒增大，膜层脆性增加。沉积速率提高、但膜层结合力下降；在 ６５０ Ｖ以下膜基界面有一伪扩散层出现，超过６５０ Ｖ后伪扩散层消失，这是改善膜基结合行为的关键因素。Using an industrial type set--up of pulsed DC plasma chemical vapor deposition the TiN coatings on high speed steel (W18Cr4V) and cemented carbide SC30 was performed. The effect of pulsed voltage on interfacial bonding behavior of TiN coatings was investigated by scanning electron microscopy (SEM) and continual loading indentation test. The results show that when the pulsed voltage increased from 550 V to 750 V, the grain size, the coatings brittleness and deposition rate of TiN coatings increase, but the interfacial bonding strength decreases obviously when higher voltage (>650 V) was used. A pseudodiffusion zone between the substrate and the coating was observed when the pulsed voltage below 650 V was used. This could be a critical effect on improving interfacial bonging strength of TiN coatings. The formation mechanism of pseudo--diffusion zone was discussed.

关 键 词：PCVD 膜基结合力 压入法 氮化钛 薄膜 

分 类 号：O484[理学—固体物理] TG174.44[理学—物理]