PI/AlN纳米复合薄膜结构与介电性能研究  

Structure and Dielectric Properties of PI/AlN Hybrid Film

作　　者：李广[1] 殷景华[1,2] 刘晓旭[1] 冯宇[2] 田付强[2] 雷清泉[2] 

机构地区：[1]哈尔滨理工大学应用科学学院,哈尔滨150080 [2]哈尔滨理工大学教育部工程电介质及其应用重点实验室,哈尔滨150080

出　　处：《绝缘材料》2011年第6期21-24,共4页Insulating Materials

基　　金：国家自然科学基金项目(50677009;51077028);黑龙江省自然科学基金(A201006)

摘　　要：采用原位聚合法制备了聚酰亚胺/氮化铝(PI/AlN)纳米复合薄膜,用小角散射(SAXS)、扫描电镜(SEM)对薄膜进行表征,研究了不同纳米掺杂量对材料电阻率、介电常数(ε)和介质损耗因数(tanδ)的影响。结果表明,随着纳米AlN含量的增加,分形结构由质量分形转变为表面分形,当AlN含量为1%时,复合薄膜的介电常数达到最低值,电阻率提高了一个数量级;介质损耗在低频范围内明显增加;AlN的掺杂提高了纳米复合薄膜的绝缘性能。A polyimide/aluminum nitride（PI/AlN） nano-composite film was prepared by in-situ polymerization method.The microscopic structure of the film was characterized by small angle scattering（SAXS） and scanning electron microscope（SEM）.The effects of nano-AlN content on the volume resistivity,permittivity（ε） and dielectric loss of the film were studied.The results show that with increasing the nano-AlN content,the fractal structure changes from quality fractal to surface fractal.The permittivity of the film attains the minimum value when the nano-AlN content is 1%.The volume resistivity is increased by one order of magnitude,and the dielectric loss increases obviously in low frequency range,which indicates that the addition of AlN can improve the insulation performance.

关 键 词：聚酰亚胺 氮化铝 小角散射 介电常数 体积电阻率 

分 类 号：TM215.3[一般工业技术—材料科学与工程] TQ323.7[电气工程—电工理论与新技术]