激光掺杂制备晶体硅太阳电池研究进展  

Research Progress of Laser Doping in Preparation of Crystalline Silicon Solar Cells

作　　者：李涛[1] 周春兰[1] 赵雷[1] 李海玲[1] 刁宏伟[1] 刘振刚[1] 王文静[1] 

机构地区：[1]中国科学院电工研究所太阳能热利用及光伏系统重点实验室北京100190

出　　处：《电工技术学报》2011年第12期141-147,共7页Transactions of China Electrotechnical Society

基　　金：中国科学院知识创新工程重要方向资助项目(KGCX2-YW-382)

摘　　要：激光掺杂具有可控性强,工艺简单,对材料造成的激光诱导损伤小等优点,是制备高效晶体硅太阳电池理想的技术选择。本文总结了国内外激光掺杂的研究工作,介绍了掺杂制备晶体硅太阳电池主要激光技术,分析了激光能量密度、激光脉冲个数、激光波长,和材料表面织构与否对激光掺杂效果的影响,以及激光掺杂制备的晶体硅太阳电池的优势特点。Laser doping is an ideal technology option in preparation of highly efficient crystalline solar cells for its advantages, such as strong controllable, simple process, and little laser-induced damage to materials. This paper summarizes the research of laser-doping at home and abroad, introduces the main laser technology in doping preparation of crystalline silicon solar cells, and analyzes the influence of laser density of energy, laser pulse number, laser wavelength and surface textured or not to laser doping effects, as well as the advantages and characteristics of crystalline silicon solar cells fabricated by laser-doping.

关 键 词：激光掺杂 激光诱导损伤 掺杂浓度 掺杂深度 晶体硅太阳电池 

分 类 号：TN2[电子电信—物理电子学]