对硅基拉曼激光器性能的实验分析  

Experimental analysis on the characteristic of silicon-based Raman laser

作　　者：李志全[1] 李文超[2] 张景茹[1] 任晓丽[1] 曹平[1] 王亚男[1] 

机构地区：[1]燕山大学电气工程学院,河北秦皇岛066004 [2]东北大学秦皇岛分校自动化系,河北秦皇岛066004

出　　处：《红外与激光工程》2011年第12期2376-2381,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金(60877047);河北省自然科学基金(F2010002002);教育部高等学校博士学科点专项科研基金(20070216004)

摘　　要：为了解决拉曼激光器的非线性光学损耗严重以及输出效率偏低的问题,利用受激拉曼散射(SRS)的非线性频移机制,以Si元素作为拉曼激光器的增益介质设计了激光器的结构。根据硅元素波导理论,在拉曼激光器的波导结构中设计了一个反向偏置电压的p-i-n二极管,通过控制调节该反向电压值降低有效载流子寿命,从而降低由双光子吸收(TPA)引起的自由载流子吸收(FCA)以及由自由载流子吸收引起的非线性光学损耗。理论分析及实验结果表明:通过控制调节p-i-n反向偏置电压,自由载流子寿命从16 ns降低到1 ns,且输出功率在同等标准下得以显著提高,从而验证了该结构的可行性和优越性。In order to resolve the problem of serious nonlinear optical loss and low output efficiency,a novel structure of Raman laser used Si as the gain medium was designed based on the nonlinear frequency shift mechanism of stimulated Raman scattering（SRS）.A reversed p-i-n diode embedded in a silicon waveguide of Raman laser was designed based on the theory of Si waveguide.The free carrier lifetime was decreased effectively through controlling and modulating the reversed voltage of p-i-n diode,then the free carrier absorption（FCA） arised from two photon absorption（TPA） and the nonlinear optical loss arised from free carrier absorption were reduced.The theory analysis and experimental results indicate that the lifetime of free carrier is able to decrease from 16 ns to 1 ns by means of controlling and modulating the voltage of p-i-n diode,and it makes that the output power increases outstandingly,and the feasibility and superiority of the structure are demonstrated.

关 键 词：拉曼激光器 受激拉曼散射 双光子吸收 自由载流子吸收 

分 类 号：TN248.1[电子电信—物理电子学]